19-5579; Rev 10/10
NOT RECOMMENDED FOR NEW DESIGNS
DS1220Y
16k Nonvolatile SRAM
www.maxim-ic.com
FEATURES
PIN ASSIGNMENT
?
10 years minimum data retention in the
?
?
?
?
?
?
?
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times of 100 ns
Full ±10% operating range
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
?
Optional industrial temperature range of
-40°C to +85°C, designated IND
24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A10
- Address Inputs
DQ0-DQ7
- Data In/Data Out
- Chip Enable
CE
- Write Enable
W E
- Output Enable
OE
V CC
- Power (+5V)
GND
- Ground
DESCRIPTION
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that
constantly monitor V CC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to
the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or
the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
1 of 9
相关PDF资料
DS1225AB-70+ IC NVSRAM 64KBIT 70NS 28DIP
DS1225Y-200+ IC NVSRAM 64KBIT 200NS 28DIP
DS1230WP-150+ IC NVSRAM 256KBIT 150NS 34PCM
DS1230YP-100+ IC NVSRAM 256KBIT 100NS 34PCM
DS1245AB-120IND+ IC SRAM NV 128KX8 5.25V 32-DIP
DS1245W-100IND+ IC NVSRAM 1MBIT 100NS 32DIP
DS1245Y-70IND+ IC NVSRAM 1MBIT 70NS 32DIP
DS1249AB-85IND# IC NVSRAM 2048KBIT 85NS 32DIP
相关代理商/技术参数
DS1220Y-120 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM
DS1220Y-120+ 制造商:Maxim Integrated Products 功能描述:RAM NV 16K-120NS LEAD FREE - Rail/Tube
DS1220Y-120-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1220Y-150 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1220Y-150+ 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1220Y-150-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1220Y-200 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1220Y-200+ 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube